Transport Simulation of a Nanoscale Silicon Rod Field-Effect Transistor

نویسندگان

  • C. Dwyer
  • R. Taylor
  • L. Vicci
چکیده

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb[1] semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline. We also briefly explore a computer architecture we call a “computational oracle” for which the O-FET is well suited. Our simulation results, SPICE kernel modifications, and input decks may be found at ftp://ftp.cs.unc.edu/pub/packages/GRIP/publication_addenda /TSNSRFET.

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تاریخ انتشار 2002